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2N5551BU

Manufacturer:

On Semiconductor

Mfr.Part #:

2N5551BU

Datasheet:
Description:

BJTs TO-92-3 Through Hole NPN 625 mW Collector Base Voltage (VCBO):180 V Collector Emitter Voltage (VCEO):160 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Voltage Rating (DC)160 V
Length5.2 mm
Width4.19 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height5.33 mm
PackagingBulk
Radiation HardeningNo
RoHSCompliant
PolarityNPN
Contact PlatingTin
Frequency300 MHz
Number of Elements1
Current Rating600 mA
Max Power Dissipation625 mW
Power Dissipation625 mW
Max Collector Current600 mA
Collector Emitter Breakdown Voltage160 V
Transition Frequency100 MHz
Element ConfigurationSingle
Max Frequency300 MHz
Collector Emitter Voltage (VCEO)160 V
Gain Bandwidth Product300 MHz
Collector Base Voltage (VCBO)180 V
Collector Emitter Saturation Voltage200 mV
Emitter Base Voltage (VEBO)6 V
hFE Min80
Schedule B8541210080
Max Cutoff Collector Current600 mA
Transistor TypeNPN

Stock: 210

Distributors
pcbx
Unit Price$0.09783
Ext.Price$0.09783
QtyUnit PriceExt.Price
1$0.09783$0.09783
10$0.08752$0.87520
50$0.07829$3.91450
100$0.06851$6.85100